| PART |
Description |
Maker |
| M28W320EBB85ZB1T M28W320EBT85N1T M28W320EBB85N1T M |
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 12.7 V; VZ min.: 11.4 V; VZ nom: 12 V
surface mount silicon Zener diodes
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 15.6 V; VZ min.: 13.8 V; VZ nom: 15 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 11.6 V; VZ min.: 10.4 V; VZ nom: 11 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 10.6 V; VZ min.: 9.4 V; VZ nom: 10 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.5 V; VZ min.: 3.1 V; VZ nom: 3.3 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 14.1 V; VZ min.: 12.4 V; VZ nom: 13 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.6 V; VZ min.: 2.2 V; VZ nom: 2.4 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 2.9 V; VZ min.: 2.5 V; VZ nom: 2.7 V
Voltage regulator double diodes - Configuration: dual c.a. ; IF max: 200 mA; Ptot: 350 mW; PZSM: 40 W; Tolerance /- %: appr. 5% ; VZ max.: 3.2 V; VZ min.: 2.8 V; VZ nom: 3 V
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位（处理器x16插槽，引导块V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| 7812 AD7812 AD7812YRU AD7811 AD7811YN AD7811YR AD7 |
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
10-Bit, 8-Channel, 350 kSPS, Serial A/D Converter
10-Bit, 4-Channel, 350 kSPS, Serial A/D Converter
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
|
AD[Analog Devices]
|
| T7300135 T7300145 T7300155 T7300235 T7300245 T7300 |
Phase Control SCR (350-550 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（350-550安培平均100-2200伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| TP2435 TP2435N8 TP2435NW |
P-Channel Enhancement-Mode Vertical DMOS FETs 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex Inc
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| ENA1198 SCH2408 |
350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| NX3008NBKT-115 |
30 V, 350 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| FQD7N10L FQD7N10LTF |
N-Channel QFET MOSFET 100 V, 5.8 A, 350 m
|
Fairchild Semiconductor
|
| SXVVN0335N1 SXVN0335N1 SUPERTEXINC-SXVVN0335N2 |
3.5 A, 350 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
SUPERTEX INC
|
| IRF713 IRF711 MTP2N35 IRF712 IRF710 IRF710-713 MTP |
N-Channel Power MOSFETs/ 2.25A/ 350-400V
N-Channel Power MOSFETs 2.25A 350-400V
N-Channel Power MOSFETs, 2.25A, 350-400V
|
FAIRCHILD[Fairchild Semiconductor]
|
| NGB8206NT4 NGB8206NT4G NGB8206NG NGB8206N |
Ignition IGBT 20 A, 350 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
|
